報(bào) 告：A Thin Film Approach to Engineering Functionality into Oxides
報(bào)告人：Prof. Darrell G. Schlom
時 間：2009年6月12日（星期五），10：00-11：00
地 點(diǎn)：曹光彪大樓326
主持人：浙江大學(xué)材料系葉志鎮(zhèn)教授
聯(lián)系人：潘新花 電話：134 8618 0477
歡迎廣大師生參加！
Darrell G. Schlom教授簡介
EDUCATION
Stanford University Materials Science and Engineering Ph.D., 1990
AREA OF EXPERTISE
Research involving heteroepitaxial growth and characterization of oxide thin films, especially ferroelectric and multiferroic oxides, oxides on semiconductors for increased functionality (e.g., spintronics), or as potential replacements for SiO2 as the gate dielectric in MOSFETs.
EXPERIENCE
Professor, Cornell University (Materials Science and Engineering, 2008 - present)
Distinguished Professor, Penn State University (Materials Science and Engineering, 2007 - 2008)
Professor, Penn State University (Materials Science and Engineering, 2002 - 2007)
AWARDS AND FELLOWSHIPS
MRS Medal (2008)
Penn State Faculty Scholar Medal in Engineering (2006)
Semiconductor Research Corporation (SRC) Inventor Recognition Award (2004)
PUBLICATIONS AND PATENTS(h index = 44, total citations > 8,000)
Over 300 Co-authored Publications (including 2 encyclopedia articles and 4 book chapters)
8 Patents Granted (2 more pending)
